Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Oxygen annealing effect on resistive switching characteristics of multilayer CeO2/Al/CeO2 resistive random-access memory

Cerium oxide-based memristors have been extensively studied because of their compatibility with CMOS technology. Yet, inconsistency of resistive switching parameters is one of the main contests in development of nonvolatile memory for commercialization. Owing to filamentary nature of the resistive s...

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Bibliographic Details
Main Authors: Muhammad Ismail, Sobia Ali Khan, Mehr Khalid Rahmani, Junhyeok Choi, Zahida Batool, Anwar Manzoor Rana, Sungjun Kim
Format: Article
Language:English
Published: IOP Publishing 2020-01-01
Series:Materials Research Express
Subjects:
oxygen annealing effect
multilayer structure
ceria film
schottky emission
resistive switching
Online Access:https://doi.org/10.1088/2053-1591/ab61b1

Internet

https://doi.org/10.1088/2053-1591/ab61b1

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