Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction

Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction

Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction...

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Bibliographic Details
Main Authors: Junqiang Zhu, Xiaofei Yue, Jiajun Chen, Jing Wang, Jing Wan, Wenzhong Bao, Laigui Hu, Ran Liu, Chunxiao Cong, Zhijun Qiu
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Applied Sciences
Subjects:
photodetector
heterojunction
MoS<sub>2</sub>
WSe<sub>2</sub>
p-doping
Online Access:https://www.mdpi.com/2076-3417/13/10/6024

Internet

https://www.mdpi.com/2076-3417/13/10/6024

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