Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction
Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction...
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MDPI AG
2023-05-01
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| Online Access: | https://www.mdpi.com/2076-3417/13/10/6024 |
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| author | Junqiang Zhu Xiaofei Yue Jiajun Chen Jing Wang Jing Wan Wenzhong Bao Laigui Hu Ran Liu Chunxiao Cong Zhijun Qiu |
| author_facet | Junqiang Zhu Xiaofei Yue Jiajun Chen Jing Wang Jing Wan Wenzhong Bao Laigui Hu Ran Liu Chunxiao Cong Zhijun Qiu |
| author_sort | Junqiang Zhu |
| collection | DOAJ |
| description | Out-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe<sub>2</sub>/MoS<sub>2</sub> van der Waals heterojunction. The laser treatment is used for p-doping WSe<sub>2</sub> nanoflakes using high work function WO<sub>x</sub>. Then, an n-type MoS<sub>2</sub> nanoflake is transferred onto the resulting p-doped WSe<sub>2</sub> nanoflake. The built-in electric field of p-doped WSe<sub>2</sub>/MoS<sub>2</sub> is stronger than that of pristine WSe<sub>2</sub>/MoS<sub>2</sub>. The p-n junction between p-doped WSe<sub>2</sub> and MoS<sub>2</sub> can separate more photogenerated electron–hole pairs and inject more electrons into MoS<sub>2</sub> under laser illumination than pristine WSe<sub>2</sub>/MoS<sub>2</sub>. Thus, a high photoresponsivity (<i>R</i>) of ~1.28 × 10<sup>5</sup> A·W<sup>−1</sup> and high specific detectivity (<i>D</i>*) of ~7.17 × 10<sup>13</sup> Jones are achieved under the illumination of a 633 nm laser, which is approximately two orders higher than the best phototransistor based on a WSe<sub>2</sub>/MoS<sub>2</sub> heterojunction. Our work provides an effective and simple method to enhance photoresponsivity and detectivity in two-dimensional (2D) heterojunction phototransistors, indicating the potential applications in fabricating high-performance photodetectors based on 2DLMs. |
| first_indexed | 2024-03-11T03:58:34Z |
| format | Article |
| id | doaj.art-551ca43b910649d2a13de37a78a266fc |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-11T03:58:34Z |
| publishDate | 2023-05-01 |
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| series | Applied Sciences |
| spelling | doaj.art-551ca43b910649d2a13de37a78a266fc2023-11-18T00:19:27ZengMDPI AGApplied Sciences2076-34172023-05-011310602410.3390/app13106024Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals HeterojunctionJunqiang Zhu0Xiaofei Yue1Jiajun Chen2Jing Wang3Jing Wan4Wenzhong Bao5Laigui Hu6Ran Liu7Chunxiao Cong8Zhijun Qiu9State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaSchool of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University, Shanghai 200433, ChinaOut-of-plane p-n heterojunctions based on two-dimensional layered materials (2DLMs) with unusual physical characteristics are attracting extensive research attention for their application as photodetectors. However, the present fabrication method based on 2DLMs produces out-of-plane p-n homojunction devices with low photoresponsivity and detectivity. This work reports an ultrasensitive phototransistor based on a laser-induced p-doped WSe<sub>2</sub>/MoS<sub>2</sub> van der Waals heterojunction. The laser treatment is used for p-doping WSe<sub>2</sub> nanoflakes using high work function WO<sub>x</sub>. Then, an n-type MoS<sub>2</sub> nanoflake is transferred onto the resulting p-doped WSe<sub>2</sub> nanoflake. The built-in electric field of p-doped WSe<sub>2</sub>/MoS<sub>2</sub> is stronger than that of pristine WSe<sub>2</sub>/MoS<sub>2</sub>. The p-n junction between p-doped WSe<sub>2</sub> and MoS<sub>2</sub> can separate more photogenerated electron–hole pairs and inject more electrons into MoS<sub>2</sub> under laser illumination than pristine WSe<sub>2</sub>/MoS<sub>2</sub>. Thus, a high photoresponsivity (<i>R</i>) of ~1.28 × 10<sup>5</sup> A·W<sup>−1</sup> and high specific detectivity (<i>D</i>*) of ~7.17 × 10<sup>13</sup> Jones are achieved under the illumination of a 633 nm laser, which is approximately two orders higher than the best phototransistor based on a WSe<sub>2</sub>/MoS<sub>2</sub> heterojunction. Our work provides an effective and simple method to enhance photoresponsivity and detectivity in two-dimensional (2D) heterojunction phototransistors, indicating the potential applications in fabricating high-performance photodetectors based on 2DLMs.https://www.mdpi.com/2076-3417/13/10/6024photodetectorheterojunctionMoS<sub>2</sub>WSe<sub>2</sub>p-doping |
| spellingShingle | Junqiang Zhu Xiaofei Yue Jiajun Chen Jing Wang Jing Wan Wenzhong Bao Laigui Hu Ran Liu Chunxiao Cong Zhijun Qiu Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction Applied Sciences photodetector heterojunction MoS<sub>2</sub> WSe<sub>2</sub> p-doping |
| title | Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction |
| title_full | Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction |
| title_fullStr | Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction |
| title_full_unstemmed | Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction |
| title_short | Ultrasensitive Phototransistor Based on Laser-Induced P-Type Doped WSe<sub>2</sub>/MoS<sub>2</sub> Van der Waals Heterojunction |
| title_sort | ultrasensitive phototransistor based on laser induced p type doped wse sub 2 sub mos sub 2 sub van der waals heterojunction |
| topic | photodetector heterojunction MoS<sub>2</sub> WSe<sub>2</sub> p-doping |
| url | https://www.mdpi.com/2076-3417/13/10/6024 |
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