Properties of arsenic–implanted Hg1-xCdxTe MBE films

Properties of arsenic–implanted Hg1-xCdxTe MBE films

Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation w...

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Bibliographic Details
Main Authors: Izhnin Igor I., Voitsekhovskii Alexandr V., Korotaev Alexandr G., Fitsych Olena I., Bonchyk Oleksandr Yu., Savytskyy Hrygory V., Mynbaev Karim D., Varavin Vasilii S., Dvoretsky Sergey A., Yakushev Maxim V., Jakiela Rafal, Trzyna Malgorzata
Format: Article
Language:English
Published: EDP Sciences 2017-01-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/201713301001

Internet

http://dx.doi.org/10.1051/epjconf/201713301001

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