Properties of arsenic–implanted Hg1-xCdxTe MBE films
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation w...
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| Format: | Article |
| Language: | English |
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EDP Sciences
2017-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | http://dx.doi.org/10.1051/epjconf/201713301001 |
| _version_ | 1818740390032834560 |
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| author | Izhnin Igor I. Voitsekhovskii Alexandr V. Korotaev Alexandr G. Fitsych Olena I. Bonchyk Oleksandr Yu. Savytskyy Hrygory V. Mynbaev Karim D. Varavin Vasilii S. Dvoretsky Sergey A. Yakushev Maxim V. Jakiela Rafal Trzyna Malgorzata |
| author_facet | Izhnin Igor I. Voitsekhovskii Alexandr V. Korotaev Alexandr G. Fitsych Olena I. Bonchyk Oleksandr Yu. Savytskyy Hrygory V. Mynbaev Karim D. Varavin Vasilii S. Dvoretsky Sergey A. Yakushev Maxim V. Jakiela Rafal Trzyna Malgorzata |
| author_sort | Izhnin Igor I. |
| collection | DOAJ |
| description | Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate. |
| first_indexed | 2024-12-18T01:39:58Z |
| format | Article |
| id | doaj.art-554f618d80f84c1793b30beaa0701afd |
| institution | Directory Open Access Journal |
| issn | 2100-014X |
| language | English |
| last_indexed | 2024-12-18T01:39:58Z |
| publishDate | 2017-01-01 |
| publisher | EDP Sciences |
| record_format | Article |
| series | EPJ Web of Conferences |
| spelling | doaj.art-554f618d80f84c1793b30beaa0701afd2022-12-21T21:25:21ZengEDP SciencesEPJ Web of Conferences2100-014X2017-01-011330100110.1051/epjconf/201713301001epjconf_icsenob2017_01001Properties of arsenic–implanted Hg1-xCdxTe MBE filmsIzhnin Igor I.Voitsekhovskii Alexandr V.0Korotaev Alexandr G.1Fitsych Olena I.2Bonchyk Oleksandr Yu.3Savytskyy Hrygory V.4Mynbaev Karim D.Varavin Vasilii S.5Dvoretsky Sergey A.6Yakushev Maxim V.7Jakiela Rafal8Trzyna Malgorzata9National Research Tomsk State UniversityNational Research Tomsk State UniversityHetman Petro Sahaidachny National Army AcademyYa.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASUYa.S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASURzhanov Institute of Semiconductor PhysicsRzhanov Institute of Semiconductor PhysicsRzhanov Institute of Semiconductor PhysicsInstitute of Physics, Polish Academy of SciencesFaculty of Mathematics and Natural Sciences, University of RzeszowDefect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.http://dx.doi.org/10.1051/epjconf/201713301001 |
| spellingShingle | Izhnin Igor I. Voitsekhovskii Alexandr V. Korotaev Alexandr G. Fitsych Olena I. Bonchyk Oleksandr Yu. Savytskyy Hrygory V. Mynbaev Karim D. Varavin Vasilii S. Dvoretsky Sergey A. Yakushev Maxim V. Jakiela Rafal Trzyna Malgorzata Properties of arsenic–implanted Hg1-xCdxTe MBE films EPJ Web of Conferences |
| title | Properties of arsenic–implanted Hg1-xCdxTe MBE films |
| title_full | Properties of arsenic–implanted Hg1-xCdxTe MBE films |
| title_fullStr | Properties of arsenic–implanted Hg1-xCdxTe MBE films |
| title_full_unstemmed | Properties of arsenic–implanted Hg1-xCdxTe MBE films |
| title_short | Properties of arsenic–implanted Hg1-xCdxTe MBE films |
| title_sort | properties of arsenic implanted hg1 xcdxte mbe films |
| url | http://dx.doi.org/10.1051/epjconf/201713301001 |
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