4H-SiC MESFET with darin-side and undoped region for modifying charge distribution and high power applications
In this paper, a novel MESFET with an undoped region (DS-UR) and drain side-double recessed 4H-SiC metal semiconductor field effect transistor (MESFET) is presented. The key idea in this work is to modify the charge concentration and electric field distribution to improving breakdown voltage (VBR) a...
| Main Authors: | , , |
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| Format: | Article |
| Language: | fas |
| Published: |
Semnan University
2015-12-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_1744_d173bf41b30289ccc4e89af4e89c7706.pdf |