Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110)
Abstract The successful synthesis of wafer‐scale single crystalline graphene on semiconducting Ge substrate has been considered a significant breakthrough toward the manufacturing of graphene‐based electronic and photonic devices; however, the assumed extremely high electrical mobility has not been...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-08-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300482 |