Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110)
Abstract The successful synthesis of wafer‐scale single crystalline graphene on semiconducting Ge substrate has been considered a significant breakthrough toward the manufacturing of graphene‐based electronic and photonic devices; however, the assumed extremely high electrical mobility has not been...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2023-08-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300482 |
| _version_ | 1797742964109213696 |
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| author | Wang Guo Miao Zhang Zhongying Xue Paul K. Chu Yongfeng Mei Ziao Tian Zengfeng Di |
| author_facet | Wang Guo Miao Zhang Zhongying Xue Paul K. Chu Yongfeng Mei Ziao Tian Zengfeng Di |
| author_sort | Wang Guo |
| collection | DOAJ |
| description | Abstract The successful synthesis of wafer‐scale single crystalline graphene on semiconducting Ge substrate has been considered a significant breakthrough toward the manufacturing of graphene‐based electronic and photonic devices; however, the assumed extremely high electrical mobility has not been found yet due to the lack of an adequate characterization method. Herein, state‐of‐the‐art transfer methods are developed to encapsulate the single crystalline graphene, which is grown on semiconducting Ge(110), in two hexagonal boron nitride (hBN) flakes, then acquire its inherent electrical mobility precisely via edge‐contact technique. It is found that single crystalline graphene grown on Ge(110) possesses a maximum carrier mobility of over 100 000 cm2 V−1 s−1 at low temperatures (2.3 K), which is superior to that obtained from graphene grown on other nonmetal substrates. Due to the extremely high mobility, well‐defined quantum Hall effect and Shubnikov‐de Haas oscillations can be observed at low temperatures as well. The study suggests that the excellent carrier mobility of graphene grown on Ge(110) may open an avenue to develop the practical graphene‐based nanodevices with high performance. |
| first_indexed | 2024-03-12T14:47:45Z |
| format | Article |
| id | doaj.art-557179c1d5d847afb512185f09e30910 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-12T14:47:45Z |
| publishDate | 2023-08-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-557179c1d5d847afb512185f09e309102023-08-16T01:35:27ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-08-011023n/an/a10.1002/admi.202300482Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110)Wang Guo0Miao Zhang1Zhongying Xue2Paul K. Chu3Yongfeng Mei4Ziao Tian5Zengfeng Di6National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaDepartment of Physics Department of Materials Science and Engineering and Department of Biomedical Engineering City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong 999077 ChinaDepartment of Materials Science Fudan University Shanghai 200433 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaNational Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 ChinaAbstract The successful synthesis of wafer‐scale single crystalline graphene on semiconducting Ge substrate has been considered a significant breakthrough toward the manufacturing of graphene‐based electronic and photonic devices; however, the assumed extremely high electrical mobility has not been found yet due to the lack of an adequate characterization method. Herein, state‐of‐the‐art transfer methods are developed to encapsulate the single crystalline graphene, which is grown on semiconducting Ge(110), in two hexagonal boron nitride (hBN) flakes, then acquire its inherent electrical mobility precisely via edge‐contact technique. It is found that single crystalline graphene grown on Ge(110) possesses a maximum carrier mobility of over 100 000 cm2 V−1 s−1 at low temperatures (2.3 K), which is superior to that obtained from graphene grown on other nonmetal substrates. Due to the extremely high mobility, well‐defined quantum Hall effect and Shubnikov‐de Haas oscillations can be observed at low temperatures as well. The study suggests that the excellent carrier mobility of graphene grown on Ge(110) may open an avenue to develop the practical graphene‐based nanodevices with high performance.https://doi.org/10.1002/admi.202300482chemical vapor decomposition graphenedry transferelectrical transportGe(110)hexagonal boron nitridequantum Hall effect |
| spellingShingle | Wang Guo Miao Zhang Zhongying Xue Paul K. Chu Yongfeng Mei Ziao Tian Zengfeng Di Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110) Advanced Materials Interfaces chemical vapor decomposition graphene dry transfer electrical transport Ge(110) hexagonal boron nitride quantum Hall effect |
| title | Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110) |
| title_full | Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110) |
| title_fullStr | Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110) |
| title_full_unstemmed | Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110) |
| title_short | Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110) |
| title_sort | extremely high intrinsic carrier mobility and quantum hall effect of single crystalline graphene grown on ge 110 |
| topic | chemical vapor decomposition graphene dry transfer electrical transport Ge(110) hexagonal boron nitride quantum Hall effect |
| url | https://doi.org/10.1002/admi.202300482 |
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