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Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si

Photocells based on silicide Schottky barrier contacts PtSi-n-Si and PdSi-n-Si

Task of studies is a development of the structure and way of fabrication of a photocell capable to take a radiation or in near infrared range of the spectrum (0,9–1,4) micron, or in the field of (0,5–1,4) micron. Way of fabrication and results of studies of photoelectric features of two spectrum...

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Bibliographic Details
Main Authors: A. I. Blesman, R. B. Burlakov
Format: Article
Language:English
Published: Omsk State Technical University, Federal State Autonoumos Educational Institution of Higher Education 2019-03-01
Series:Омский научный вестник
Subjects:
method of fabricating the photocell
n-type silicon
schottky barrier contacts ptsi-n-si (or pdsi-n-si)
Online Access:https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/1%20(163)/50-54%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf
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https://www.omgtu.ru/general_information/media_omgtu/journal_of_omsk_research_journal/files/arhiv/2019/1%20(163)/50-54%20%D0%91%D0%BB%D0%B5%D1%81%D0%BC%D0%B0%D0%BD%20%D0%90.%20%D0%98.,%20%D0%91%D1%83%D1%80%D0%BB%D0%B0%D0%BA%D0%BE%D0%B2%20%D0%A0.%20%D0%91..pdf

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