Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings

Vertical GaN Schottky barrier diodes (SBDs) with floating metal rings (FMRs) as edge termination structures have been fabricated on bulk GaN substrates. Devices with different FMR geometries were investigated including various numbers of rings and various spacings between rings. These devices have a...

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Bibliographic Details
Main Authors: Tsung-Han Yang, Houqiang Fu, Kai Fu, Chen Yang, Jossue Montes, Xuanqi Huang, Hong Chen, Jingan Zhou, Xin Qi, Xuguang Deng, Yuji Zhao
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Gallium nitride
power electronics
wide band-gap semiconductor
Schottky barrier diode
edge termination
floating metal ring
Online Access:https://ieeexplore.ieee.org/document/9157994/

Internet

https://ieeexplore.ieee.org/document/9157994/

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