New ternary inverter with memory function using silicon feedback field-effect transistors
Abstract In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a positive feedback loop by carrier accumulation in their channels, which allows to achi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-17035-z |