A Dual-Mode InGaP/GaAs HBT Power Amplifier Using a Low-Loss Parallel Power-Combining Transformer with IMD3 Cancellation Method

A dual mode InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) using a parallel power-combining transformer (PCT) is presented herein. A low loss transformer is implemented on a printed circuit board (PCB) to improve the passive efficiency of a PCT. Dual-mode operation is applie...

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Bibliographic Details
Main Authors: Kyutaek Oh, Hyunjin Ahn, Ilku Nam, Hui Dong Lee, Bonghyuk Park, Ockgoo Lee
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/10/14/1612