A Dual-Mode InGaP/GaAs HBT Power Amplifier Using a Low-Loss Parallel Power-Combining Transformer with IMD3 Cancellation Method
A dual mode InGaP/GaAs heterojunction bipolar transistor (HBT) power amplifier (PA) using a parallel power-combining transformer (PCT) is presented herein. A low loss transformer is implemented on a printed circuit board (PCB) to improve the passive efficiency of a PCT. Dual-mode operation is applie...
Main Authors: | , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-07-01
|
Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/10/14/1612 |