Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking

Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking

In this paper, the design and implementation of a Doherty power amplifier (DPA) are proposed using gallium nitride high electron mobility transistors (GaN HEMTs). Class-F and Class-C modes are combined to obtain an asymmetric DPA. The precise active load-pull controlling of fundamental and harmonic...

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Bibliographic Details
Main Authors: Fei Yang, Jun Li, Hongxi Yu, Sen Yan, Anxue Zhang, Kaida Xu, Zhonghe Jin
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Electronics
Subjects:
Doherty
power amplifier
envelope tracking
Class-F
Class-C
Online Access:https://www.mdpi.com/2079-9292/10/19/2327

Internet

https://www.mdpi.com/2079-9292/10/19/2327

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