A Broadband Gain Amplifier Designed with the Models for Package and Diode Using 0.5 μm GaAs E-pHEMT Process
This paper presents a 50 MHz to 5 GHz broadband gain amplifier using a 0.5 μm gallium-arsenide pseudomorphic high-electron-mobility-transistor (GaAs pHEMT). For broadband design, a high gain cascode structure with a feedback network was used. To ensure the robustness of the design, the amplifier had...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/21/2678 |