Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers

Sensing and Reliability Improvement of Electrostatic-Discharge Transient by Discrete Engineering for High-Voltage 60-V n-Channel Lateral-Diffused MOSFETs with Embedded Silicon-Controlled Rectifiers

High-voltage n-channel lateral-diffused metal-oxide-semiconductor field-effect transistor (nLDMOS) components, fabricated by a TSMC 0.25-μm 60-V bipolar-CMOS-DMOS (BCD) process with drain-side embedded silicon-controlled rectifier (SCR) of the n-p-n-arranged and p-n-p-arranged types, were inv...

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Bibliographic Details
Main Authors: Shen-Li Chen, Yi-Cih Wu
Format: Article
Language:English
Published: MDPI AG 2018-10-01
Series:Sensors
Subjects:
discrete modulation
electrostatic discharge (ESD)
n-channel lateral-diffused MOSFET (nLDMOS)
secondary breakdown current (It2)
silicon-controlled rectifier (SCR)
Online Access:http://www.mdpi.com/1424-8220/18/10/3340

Internet

http://www.mdpi.com/1424-8220/18/10/3340

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