Synthesized of gallium Nitride/PSi nano thin films using 532 nm wavelength by pulsed laser deposition technique
The porous silicon (PSi) substrate was accurately synthesized using photoelectrochemical etching. A Nanofilm gallium nitride (GaN) was then precisely deposited on this PSi substrate using pulsed laser deposition (PLD). The x-ray diffraction (XRD) investigation revealed the GaN layer's distinct...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2024-10-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_184106_ca4e0a9a13cb57aac6903b1a3ab8d1de.pdf |