Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors

Abstract In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse se...

Full description

Bibliographic Details
Main Authors: Chaofei Zha, Wei Luo, Xia Zhang, Xin Yan, Xiaomin Ren
Format: Article
Language:English
Published: SpringerOpen 2022-10-01
Series:Nanoscale Research Letters
Subjects:
InAs nanowires
Artificial synapses
Gate-all-around field-effect transistor
Synapse function
Online Access:https://doi.org/10.1186/s11671-022-03740-1

Internet

https://doi.org/10.1186/s11671-022-03740-1

Similar Items