Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors
Abstract In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse se...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2022-10-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-022-03740-1 |
| _version_ | 1797758362864058368 |
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| author | Chaofei Zha Wei Luo Xia Zhang Xin Yan Xiaomin Ren |
| author_facet | Chaofei Zha Wei Luo Xia Zhang Xin Yan Xiaomin Ren |
| author_sort | Chaofei Zha |
| collection | DOAJ |
| description | Abstract In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems. |
| first_indexed | 2024-03-12T18:28:56Z |
| format | Article |
| id | doaj.art-57014fd5f24d4e3aaaf43047a1f99bd7 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:28:56Z |
| publishDate | 2022-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-57014fd5f24d4e3aaaf43047a1f99bd72023-08-02T08:21:25ZengSpringerOpenNanoscale Research Letters1556-276X2022-10-011711910.1186/s11671-022-03740-1Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect TransistorsChaofei Zha0Wei Luo1Xia Zhang2Xin Yan3Xiaomin Ren4State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and TelecommunicationsState Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and TelecommunicationsAbstract In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In2O3) on the InAs nanowire surface serves as a charge trapping layer for information storage. The gate voltage pulse serves as stimuli of the presynaptic membrane, and the drain current and channel conductance are treated as post-synaptic current and weights of the postsynaptic membrane, respectively. At low gate voltages, the device simulates synaptic behaviors including short-term depression and long-term depression. By increasing the amplitude and quantity of gate voltage pulses, the transition from short-term depression to long-term potentiation can be achieved. The device exhibits a large memory window of over 1 V and a minimal energy consumption of 12.5 pJ per synaptic event. This work may pave the way for the development of miniaturized low-consumption synaptic devices and related neuromorphic systems.https://doi.org/10.1186/s11671-022-03740-1InAs nanowiresArtificial synapsesGate-all-around field-effect transistorSynapse function |
| spellingShingle | Chaofei Zha Wei Luo Xia Zhang Xin Yan Xiaomin Ren Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors Nanoscale Research Letters InAs nanowires Artificial synapses Gate-all-around field-effect transistor Synapse function |
| title | Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors |
| title_full | Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors |
| title_fullStr | Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors |
| title_full_unstemmed | Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors |
| title_short | Low-Consumption Synaptic Devices Based on Gate-All-Around InAs Nanowire Field-Effect Transistors |
| title_sort | low consumption synaptic devices based on gate all around inas nanowire field effect transistors |
| topic | InAs nanowires Artificial synapses Gate-all-around field-effect transistor Synapse function |
| url | https://doi.org/10.1186/s11671-022-03740-1 |
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