Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
The use of promising group III-V materials for optoelectronic applications is hindered by the high density of threading dislocations when integrated with silicon technology. Here, the authors present an electrochemical deep etching strategy to drastically reduce the the defect density.
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2019-09-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-019-12353-9 |