Effects of SiNx refractive index and SiO2 thickness on polarization‐type potential‐induced degradation in front‐emitter n‐type crystalline‐silicon photovoltaic cell modules

Effects of SiNx refractive index and SiO2 thickness on polarization‐type potential‐induced degradation in front‐emitter n‐type crystalline‐silicon photovoltaic cell modules

Abstract This study investigated how the SiNx refractive index (RI) and SiO2 thickness, dox, of stacked SiNx/SiO2 passivation layers of the front p+emitters of n‐type crystalline‐silicon (c‐Si) photovoltaic (PV) cells affect their polarization‐type potential‐induced degradation (PID) behaviors. We p...

Full description

Bibliographic Details
Main Authors: Seira Yamaguchi, Kyotaro Nakamura, Taeko Semba, Keisuke Ohdaira, Kazuhiro Marumoto, Yoshio Ohshita, Atsushi Masuda
Format: Article
Language:English
Published: Wiley 2022-07-01
Series:Energy Science & Engineering
Subjects:
acceleration test
n‐type crystalline‐silicon solar cell
passivated emitter and rear totally diffused cell
photovoltaic module
polarization‐type potential‐induced degradation
reliability
Online Access:https://doi.org/10.1002/ese3.1135

Internet

https://doi.org/10.1002/ese3.1135

Similar Items