Evaluation parameters rate of change of the microwave bipolar transistor operated in the high mode
Calculated rate of change of topological parameters (width and doping level of the base as well as the coefficient of heterogeneity) bipolar p-n-p-transistor, designed for operation at temperatures
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| Format: | Article |
| Language: | English |
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Povolzhskiy State University of Telecommunications & Informatics
2014-01-01
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| Series: | Физика волновых процессов и радиотехнические системы |
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| Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7289/7150 |