Evaluation parameters rate of change of the microwave bipolar transistor operated in the high mode
Calculated rate of change of topological parameters (width and doping level of the base as well as the coefficient of heterogeneity) bipolar p-n-p-transistor, designed for operation at temperatures
Main Author: | A.B. Fedotov |
---|---|
Format: | Article |
Language: | English |
Published: |
Povolzhskiy State University of Telecommunications & Informatics
2014-01-01
|
Series: | Физика волновых процессов и радиотехнические системы |
Subjects: | |
Online Access: | https://journals.ssau.ru/pwp/article/viewFile/7289/7150 |
Similar Items
-
Modeling the bipolar transistor/
by: 330758 Getreu, Ian E.
Published: (1978) -
About the prospects of silicon field-effect transistor microwave for running a temperature of 450-700 K
by: A.B. Fedotov
Published: (2014-04-01) -
Polysilicon emitter bipolar transistors/
by: Kapoor, Ashok K., et al.
Published: (1989) -
Modeling and characterization of heterojunction bipolar transistor as an optoelectronic mixer /
by: Nur Amirah Shaharuddin, 1989-, author, et al.
Published: (2011) -
Modeling and characterization of heterojunction bipolar transistor as an optoelectronic mixer /
by: Nur Amirah Shaharuddin, 1989-, author
Published: (2011)