Effects of Annealing on Surface Residual Impurities and Intrinsic Defects of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>

Effects of Annealing on Surface Residual Impurities and Intrinsic Defects of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub>

In this study, the effects of annealing on the surface residual impurities and intrinsic defects of unintentionally doped (UID) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> are investigated by adopting high-temperature thermal treatments at 1000 °C for 1 h under vacuum an...

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Bibliographic Details
Main Authors: Songhao Wu, Zichun Liu, Han Yang, Yeliang Wang
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Crystals
Subjects:
<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>
annealing
defects
activation energy
Online Access:https://www.mdpi.com/2073-4352/13/7/1045

Internet

https://www.mdpi.com/2073-4352/13/7/1045

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