Highly Integrated, Very High Gain 20Watt X-Band SSPA in GaN Technology
This paper shows design and development of a highly integrated solid state power amplifier (SSPA) operating in X-Band. The last amplifying stage is realized in GaN technology. For the first time in the high power amplifier, the vertical orientation of the last amplification stage was used, which all...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Spolecnost pro radioelektronicke inzenyrstvi
2022-04-01
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| Series: | Radioengineering |
| Subjects: | |
| Online Access: | https://www.radioeng.cz/fulltexts/2022/22_01_0077_0084.pdf |