Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength

Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick si...

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Main Authors: Kozo Sugimoto, Shigeki Matsuo, Yoshiki Naoi
Format: Article
Language:English
Published: Nature Portfolio 2020-12-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-020-78564-z
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author Kozo Sugimoto
Shigeki Matsuo
Yoshiki Naoi
author_facet Kozo Sugimoto
Shigeki Matsuo
Yoshiki Naoi
author_sort Kozo Sugimoto
collection DOAJ
description Abstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.
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spelling doaj.art-57fc66334f8140fd9bb6d97ac18754172022-12-21T22:55:39ZengNature PortfolioScientific Reports2045-23222020-12-011011710.1038/s41598-020-78564-zInscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelengthKozo Sugimoto0Shigeki Matsuo1Yoshiki Naoi2Department of Mechanical Engineering, Shibaura Institute of TechnologyDepartment of Mechanical Engineering, Shibaura Institute of TechnologyGraduate School of Technology, Industrial and Social Science, Tokushima UniversityAbstract Using focused subnanosecond laser pulses at $$1.064\,\upmu \hbox {m}$$ 1.064 μ m wavelength, modification of silicon into opaque state was induced. While silicon exhibits one-photon absorption at this wavelength, the modification was induced inside $$300\,\upmu \hbox {m}$$ 300 μ m -thick silicon substrate without damaging top or bottom surfaces. The depth range of the focus position was investigated where inside of the substrate can be modified without damaging the surfaces. Using this technique, diffraction gratings were inscribed inside silicon substrate. Diffraction from the gratings were observed, and the diffraction angle well agreed with the theoretical value. These results demonstrate that this technique could be used for fabricating infrared optical elements in silicon.https://doi.org/10.1038/s41598-020-78564-z
spellingShingle Kozo Sugimoto
Shigeki Matsuo
Yoshiki Naoi
Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
Scientific Reports
title Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_full Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_fullStr Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_full_unstemmed Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_short Inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
title_sort inscribing diffraction grating inside silicon substrate using a subnanosecond laser in one photon absorption wavelength
url https://doi.org/10.1038/s41598-020-78564-z
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AT yoshikinaoi inscribingdiffractiongratinginsidesiliconsubstrateusingasubnanosecondlaserinonephotonabsorptionwavelength