Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method
The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, th...
| Main Authors: | , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-03-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/3/640 |
| _version_ | 1827748555307089920 |
|---|---|
| author | Xueqin Li Linchun Gao Tao Ni Jingnan Zhou Xiaojing Li Yifan Li Lida Xu Runjian Wang Chuanbin Zeng Bo Li Jiajun Luo Jing Li |
| author_facet | Xueqin Li Linchun Gao Tao Ni Jingnan Zhou Xiaojing Li Yifan Li Lida Xu Runjian Wang Chuanbin Zeng Bo Li Jiajun Luo Jing Li |
| author_sort | Xueqin Li |
| collection | DOAJ |
| description | The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, the present study aims to investigate the electromigration reliability of Au-Al bonding by comparing the conventional heterogeneous contacts with OPM structures, which are homogeneous contacts. A novel bonding layout was developed to precisely detect the resistance and obtain stage changes in electromigration. The experimental results demonstrated that the relative resistance shift of Au-Al bonding at 250 °C was 98.7%, while CrAu and NiPdAu OPM structures exhibited only 46.1% and 2.93% shifts, which suggests that the reliability of OPM structures was improved by a factor of 2.14 and 33.6, respectively. The degradation of Au-Al bonding was attributed to the large cracks observed at the bonding interface and lateral consumption of Al elements. In contrast, OPM structures only exhibited tiny voids and maintained a better bonding state overall, indicating that homogeneous metal contacts have better immunity to electromigration. Furthermore, this study also observed the polarity effect of electromigration and analyzed the impact of NiPdAu thickness on reliability. Overall, this research provides a novel approach and an insightful theoretical reference for addressing the bottleneck of high-temperature electromigration reliability in high-temperature sensor packaging. |
| first_indexed | 2024-03-11T06:09:14Z |
| format | Article |
| id | doaj.art-58282dbb1b8e462288641c3cddec1928 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T06:09:14Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-58282dbb1b8e462288641c3cddec19282023-11-17T12:43:38ZengMDPI AGMicromachines2072-666X2023-03-0114364010.3390/mi14030640Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring MethodXueqin Li0Linchun Gao1Tao Ni2Jingnan Zhou3Xiaojing Li4Yifan Li5Lida Xu6Runjian Wang7Chuanbin Zeng8Bo Li9Jiajun Luo10Jing Li11Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, ChinaThe ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, the present study aims to investigate the electromigration reliability of Au-Al bonding by comparing the conventional heterogeneous contacts with OPM structures, which are homogeneous contacts. A novel bonding layout was developed to precisely detect the resistance and obtain stage changes in electromigration. The experimental results demonstrated that the relative resistance shift of Au-Al bonding at 250 °C was 98.7%, while CrAu and NiPdAu OPM structures exhibited only 46.1% and 2.93% shifts, which suggests that the reliability of OPM structures was improved by a factor of 2.14 and 33.6, respectively. The degradation of Au-Al bonding was attributed to the large cracks observed at the bonding interface and lateral consumption of Al elements. In contrast, OPM structures only exhibited tiny voids and maintained a better bonding state overall, indicating that homogeneous metal contacts have better immunity to electromigration. Furthermore, this study also observed the polarity effect of electromigration and analyzed the impact of NiPdAu thickness on reliability. Overall, this research provides a novel approach and an insightful theoretical reference for addressing the bottleneck of high-temperature electromigration reliability in high-temperature sensor packaging.https://www.mdpi.com/2072-666X/14/3/640Au-Al wire bondingOPM structureelectromigration reliabilityhigh temperature |
| spellingShingle | Xueqin Li Linchun Gao Tao Ni Jingnan Zhou Xiaojing Li Yifan Li Lida Xu Runjian Wang Chuanbin Zeng Bo Li Jiajun Luo Jing Li Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method Micromachines Au-Al wire bonding OPM structure electromigration reliability high temperature |
| title | Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method |
| title_full | Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method |
| title_fullStr | Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method |
| title_full_unstemmed | Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method |
| title_short | Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method |
| title_sort | analysis of degradation of electromigration reliability of au al and opm wire bonded contacts at 250 °c using resistance monitoring method |
| topic | Au-Al wire bonding OPM structure electromigration reliability high temperature |
| url | https://www.mdpi.com/2072-666X/14/3/640 |
| work_keys_str_mv | AT xueqinli analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT linchungao analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT taoni analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT jingnanzhou analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT xiaojingli analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT yifanli analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT lidaxu analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT runjianwang analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT chuanbinzeng analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT boli analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT jiajunluo analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod AT jingli analysisofdegradationofelectromigrationreliabilityofaualandopmwirebondedcontactsat250cusingresistancemonitoringmethod |