Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance

Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance

In this work, the implementation of HfZrO layers for the tunneling, charge trapping, and blocking mechanisms within the device offer benefits in terms of programmability and data retention. This configuration has resulted in a memory device that can achieve a significant difference in threshold volt...

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Bibliographic Details
Main Authors: Zeyang Xiang, Kexiang Wang, Jie Lu, Zixuan Wang, Huilin Jin, Ranping Li, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ran Jiang
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Applied Sciences
Subjects:
homogeneous oxide stacking
multilevel-cell (MLC) NAND memory
hafnium-zirconium oxide (HfZrO)
charge trap memory (CTM)
Online Access:https://www.mdpi.com/2076-3417/14/6/2588

Internet

https://www.mdpi.com/2076-3417/14/6/2588

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