Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance
In this work, the implementation of HfZrO layers for the tunneling, charge trapping, and blocking mechanisms within the device offer benefits in terms of programmability and data retention. This configuration has resulted in a memory device that can achieve a significant difference in threshold volt...
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MDPI AG
2024-03-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/14/6/2588 |
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| author | Zeyang Xiang Kexiang Wang Jie Lu Zixuan Wang Huilin Jin Ranping Li Mengrui Shi Liuxuan Wu Fuyu Yan Ran Jiang |
| author_facet | Zeyang Xiang Kexiang Wang Jie Lu Zixuan Wang Huilin Jin Ranping Li Mengrui Shi Liuxuan Wu Fuyu Yan Ran Jiang |
| author_sort | Zeyang Xiang |
| collection | DOAJ |
| description | In this work, the implementation of HfZrO layers for the tunneling, charge trapping, and blocking mechanisms within the device offer benefits in terms of programmability and data retention. This configuration has resulted in a memory device that can achieve a significant difference in threshold voltage of around 2 V per memory level. This difference is crucial for effectively distinguishing between multiple levels of memory in MLC applications. Additionally, the device operates at low programming voltages below 14 V. Furthermore, the device showcases impressive endurance and data retention capabilities, maintaining a large memory window over extended periods and under varying temperature conditions. The advancement in the a-IGZO-based memory device, characterized by its uniform oxide stacking, presents a viable solution to the industry’s requirement for memory storage options that are efficient, dependable, and economical. |
| first_indexed | 2024-04-24T18:34:22Z |
| format | Article |
| id | doaj.art-58524cfb35514c449f7ebcd073678929 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-04-24T18:34:22Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-58524cfb35514c449f7ebcd0736789292024-03-27T13:20:10ZengMDPI AGApplied Sciences2076-34172024-03-01146258810.3390/app14062588Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory PerformanceZeyang Xiang0Kexiang Wang1Jie Lu2Zixuan Wang3Huilin Jin4Ranping Li5Mengrui Shi6Liuxuan Wu7Fuyu Yan8Ran Jiang9Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaFaculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, ChinaIn this work, the implementation of HfZrO layers for the tunneling, charge trapping, and blocking mechanisms within the device offer benefits in terms of programmability and data retention. This configuration has resulted in a memory device that can achieve a significant difference in threshold voltage of around 2 V per memory level. This difference is crucial for effectively distinguishing between multiple levels of memory in MLC applications. Additionally, the device operates at low programming voltages below 14 V. Furthermore, the device showcases impressive endurance and data retention capabilities, maintaining a large memory window over extended periods and under varying temperature conditions. The advancement in the a-IGZO-based memory device, characterized by its uniform oxide stacking, presents a viable solution to the industry’s requirement for memory storage options that are efficient, dependable, and economical.https://www.mdpi.com/2076-3417/14/6/2588homogeneous oxide stackingmultilevel-cell (MLC) NAND memoryhafnium-zirconium oxide (HfZrO)charge trap memory (CTM) |
| spellingShingle | Zeyang Xiang Kexiang Wang Jie Lu Zixuan Wang Huilin Jin Ranping Li Mengrui Shi Liuxuan Wu Fuyu Yan Ran Jiang Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance Applied Sciences homogeneous oxide stacking multilevel-cell (MLC) NAND memory hafnium-zirconium oxide (HfZrO) charge trap memory (CTM) |
| title | Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance |
| title_full | Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance |
| title_fullStr | Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance |
| title_full_unstemmed | Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance |
| title_short | Uniform Oxide Layer Integration in Amorphous IGZO Thin Film Transistors for Enhanced Multilevel-Cell NAND Memory Performance |
| title_sort | uniform oxide layer integration in amorphous igzo thin film transistors for enhanced multilevel cell nand memory performance |
| topic | homogeneous oxide stacking multilevel-cell (MLC) NAND memory hafnium-zirconium oxide (HfZrO) charge trap memory (CTM) |
| url | https://www.mdpi.com/2076-3417/14/6/2588 |
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