Comparison Elements on STG DICE cell for Content-Addressable Memory and Simulation of Single-Event Transients

Comparison Elements on STG DICE cell for Content-Addressable Memory and Simulation of Single-Event Transients

Comparison elements on base the STG DICE cell and the logical element “Exclusive OR” for a content-addressable memory were designed and simulated. The comparison element contains two identical joint groups of transistors that are spaced on the chip by the distance of four micrometers, so the loss of...

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Bibliographic Details
Main Authors: V. Ya. Stenin, A. V. Antonyuk
Format: Article
Language:English
Published: Telecommunications Society, Academic Mind 2017-06-01
Series:Telfor Journal
Subjects:
content-addressable memory
DICE
logical element
memory cell
single nuclear particle
topology
Online Access: http://journal.telfor.rs/Published/Vol9No1/Vol9No1_A11.pdf

Internet

http://journal.telfor.rs/Published/Vol9No1/Vol9No1_A11.pdf

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