Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy
We measure the temperature dependence of the indirect band gap of isotopically purified ^{28}Si:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2023-03-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.5.013182 |