Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy
We measure the temperature dependence of the indirect band gap of isotopically purified ^{28}Si:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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American Physical Society
2023-03-01
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| Series: | Physical Review Research |
| Online Access: | http://doi.org/10.1103/PhysRevResearch.5.013182 |
| _version_ | 1827285242291945472 |
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| author | E. Sauter N. V. Abrosimov J. Hübner M. Oestreich |
| author_facet | E. Sauter N. V. Abrosimov J. Hübner M. Oestreich |
| author_sort | E. Sauter |
| collection | DOAJ |
| description | We measure the temperature dependence of the indirect band gap of isotopically purified ^{28}Si:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T^{4} dependence which is about a factor of two less than observed in previous measurements. Such a T^{4} dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved ^{28}Si:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds. |
| first_indexed | 2024-04-24T10:11:42Z |
| format | Article |
| id | doaj.art-58e00cdd28c54d598f36d187e6cec1cd |
| institution | Directory Open Access Journal |
| issn | 2643-1564 |
| language | English |
| last_indexed | 2024-04-24T10:11:42Z |
| publishDate | 2023-03-01 |
| publisher | American Physical Society |
| record_format | Article |
| series | Physical Review Research |
| spelling | doaj.art-58e00cdd28c54d598f36d187e6cec1cd2024-04-12T17:29:16ZengAmerican Physical SocietyPhysical Review Research2643-15642023-03-015101318210.1103/PhysRevResearch.5.013182Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopyE. SauterN. V. AbrosimovJ. HübnerM. OestreichWe measure the temperature dependence of the indirect band gap of isotopically purified ^{28}Si:P in the regime from 0.1 K to 3 K by high-resolution absorption spectroscopy of the donor bound exciton transition. The measurements increase the up-to-date precision of the temperature-dependent band gap change by more than one order of magnitude and reveal a T^{4} dependence which is about a factor of two less than observed in previous measurements. Such a T^{4} dependence is predicted by theory, but the absolute values differ between our experiment and the most up-to-date calculations by a factor of 30, corroborating that the electron-phonon interaction at low temperatures is still not correctly included into theory. What is more, the ability of such very high-precision band-gap measurements facilitates the use of time- and spatially resolved ^{28}Si:P absorption as a contactless, local thermometer and electric field sensor with a demonstrated time resolution of milliseconds.http://doi.org/10.1103/PhysRevResearch.5.013182 |
| spellingShingle | E. Sauter N. V. Abrosimov J. Hübner M. Oestreich Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy Physical Review Research |
| title | Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy |
| title_full | Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy |
| title_fullStr | Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy |
| title_full_unstemmed | Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy |
| title_short | Temperature dependence of the band gap of ^{28}Si:P at very low temperatures measured via time-resolved optical spectroscopy |
| title_sort | temperature dependence of the band gap of 28 si p at very low temperatures measured via time resolved optical spectroscopy |
| url | http://doi.org/10.1103/PhysRevResearch.5.013182 |
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