Atomic-Resolution EDX, HAADF, and EELS Study of GaAs 1-x Bi x Alloys

Atomic-Resolution EDX, HAADF, and EELS Study of GaAs 1-x Bi x Alloys

Abstract The distribution of alloyed atoms in semiconductors often deviates from a random distribution which can have significant effects on the properties of the materials. In this study, scanning transmission electron microscopy techniques are employed to analyze the distribution of Bi in several...

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Bibliographic Details
Main Authors: Tadas Paulauskas, Vaidas Pačebutas, Renata Butkutė, Bronislovas Čechavičius, Arnas Naujokaitis, Mindaugas Kamarauskas, Martynas Skapas, Jan Devenson, Mária Čaplovičová, Viliam Vretenár, Xiaoyan Li, Mathieu Kociak, Arūnas Krotkus
Format: Article
Language:English
Published: SpringerOpen 2020-05-01
Series:Nanoscale Research Letters
Subjects:
GaAsBi
Dilute bismides
Atomic resolution HAADF
HAADF image quantification
Bulk plasmon mapping
Atomic resolution EDX
Online Access:http://link.springer.com/article/10.1186/s11671-020-03349-2

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http://link.springer.com/article/10.1186/s11671-020-03349-2

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