Half-Ring Microlasers Based on InGaAs Quantum Well-Dots with High Material Gain

Half-Ring Microlasers Based on InGaAs Quantum Well-Dots with High Material Gain

We report on half-ring lasers that are 100–200 µm in diameter and are fabricated by cleaving the initial full rings into halves. Characteristics of the half-ring and half-disk lasers fabricated from the same wafer are compared. The active area of the microlasers is based on the quantum heterostructu...

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Bibliographic Details
Main Authors: Fedor Zubov, Eduard Moiseev, Mikhail Maximov, Alexander Vorobyev, Alexey Mozharov, Yuri Shernyakov, Nikolay Kalyuzhnyy, Sergey Mintairov, Marina Kulagina, Vladimir Dubrovskii, Natalia Kryzhanovskaya, Alexey Zhukov
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Photonics
Subjects:
diode microlasers
half-rings
half-disks
microdisks
quantum well-dots
Online Access:https://www.mdpi.com/2304-6732/10/3/290

Internet

https://www.mdpi.com/2304-6732/10/3/290

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