Enhanced Sensitivity of Silicon-On-Insulator Surface Plasmon Interferometer With Additional Silicon Layer
It is theoretically found that by adding a thin silicon layer (35 nm) on top of our previously proposed surface plasmon interference (SPI) biosensor in silicon on insulator (SOI), a sensitivity enhancement of up to 2500 nm/refractive index units (RIUs) for short sensors can be obtained. At the same...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2011-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/5771025/ |