Impact ionization dynamics in silicon by MV/cm THz fields
We investigate the dynamics of the impact ionization (IMI) process in silicon in extremely high fields in the MV/cm range and at low initial carrier concentrations; conditions that are not accessible with conventional transport measurements. We use ultrafast measurements with high-intensity terahert...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2017-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/aa936b |