Investigation of Hg 1-X Cdx te epitaxial vapor phase growth under isothermal conditions
The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated {111} CdTe single crystal substrates from a HgTe solid source under isothermal conditions in a semi-closed system with controlled Hg vapor pressure. The growth kinetics were investigated in the temperature region...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Serbian Chemical Society
1999-01-01
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Series: | Journal of the Serbian Chemical Society |
Subjects: | |
Online Access: | http://www.doiserbia.nb.rs/img/doi/0352-5139/1999/0352-51399908463J.pdf |