Investigation of Hg 1-X Cdx te epitaxial vapor phase growth under isothermal conditions
The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated {111} CdTe single crystal substrates from a HgTe solid source under isothermal conditions in a semi-closed system with controlled Hg vapor pressure. The growth kinetics were investigated in the temperature region...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Serbian Chemical Society
1999-01-01
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| Series: | Journal of the Serbian Chemical Society |
| Subjects: | |
| Online Access: | http://www.doiserbia.nb.rs/img/doi/0352-5139/1999/0352-51399908463J.pdf |
| Summary: | The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated
{111} CdTe single crystal substrates from a HgTe solid source under
isothermal conditions in a semi-closed system with controlled Hg vapor
pressure. The growth kinetics were investigated in the temperature region
from 420ºC to 550ºC with different source to substrate spacings, varying
from 1 to 11 mm. It was found that the dependence of the growth rate on
temperature could be well described by an Arrhenius type equation with an
activation energy of 80 kJ/mol in the investigated temperature interval. The
activation energies for the crystallization were the same for all the
investigated source to substrate spacing.This activation energy value points
to the importance of a solid-state diffusion process in the Hg 1-x Cdx
Te/CdTe epitaxial couple obtained by isothermal growth under the given
experimental conditions. |
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| ISSN: | 0352-5139 1820-7421 |