Investigation of Hg 1-X Cdx te epitaxial vapor phase growth under isothermal conditions

The Hg 1. x Cd x Te layers were grown by vapor phase epitaxy on Cd-terminated {111} CdTe single crystal substrates from a HgTe solid source under isothermal conditions in a semi-closed system with controlled Hg vapor pressure. The growth kinetics were investigated in the temperature region...

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Bibliographic Details
Main Authors: Jović Vesna, Đinović Zoran
Format: Article
Language:English
Published: Serbian Chemical Society 1999-01-01
Series:Journal of the Serbian Chemical Society
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/0352-5139/1999/0352-51399908463J.pdf

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