High‐Speed Optoelectronic Graphene Sampler at 1.55 µm Reaching Intrinsic Performances

High‐Speed Optoelectronic Graphene Sampler at 1.55 µm Reaching Intrinsic Performances

Abstract Optoelectronic sampling is the ultimate method to perform ultra‐high frequency analog‐to‐digital conversion. Thanks to the ps photo‐thermo‐bolometric effect in high mobility hexagonal boron nitride (h‐BN) encapsulated graphene, a state‐of‐the‐art optoelectronic sampler over a 40 GHz bandwid...

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Bibliographic Details
Main Authors: M. Tharrault, E. Grimaldi, D. Pommier, L. Hamidouche, P. Berger, S. Combrie, G. Baili, M. Rostischer, T. Taniguchi, K. Watanabe, B. Plaçais, E. Baudin, P. Legagneux
Format: Article
Language:English
Published: Wiley-VCH 2023-10-01
Series:Advanced Electronic Materials
Subjects:
bolometer
field effect transistors
graphene
optoelectronics
Online Access:https://doi.org/10.1002/aelm.202300260

Internet

https://doi.org/10.1002/aelm.202300260

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