An extended grain boundary barrier height model including the impact of internal electric field
An extended phenomenological model is proposed to rationalize the potential barriers of the varistor like boundaries of piezoelectric semiconductors. This model takes self-consistently into account the inverse piezoelectric effect of the internal electric field associated with the barrier height at...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5049473 |