A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al<sub>2</sub>O<sub>3</sub> Gate Stacks

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al<sub>2</sub>O<sub>3</sub> Gate Stacks

In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O<sub>3</sub> (PZT) and a composite PZT/Al<sub...

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Bibliographic Details
Main Authors: Lixiang Chen, Zhiqi Lu, Chaowei Fu, Ziqiang Bi, Miaoling Que, Jiawei Sun, Yunfei Sun
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
GaN
MIS-HEMT
ferroelectric
reliability
traps
Online Access:https://www.mdpi.com/2072-666X/15/1/101

Internet

https://www.mdpi.com/2072-666X/15/1/101

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