Optimal Inter-Gate Separation and Overlapped Source of Multi-Channel Line Tunnel FETs
This work comprises of design and simulation of multi-channel line tunnel field-effect transistors (mCLTFETs) by scaling inter-gate separation (IGS) and overlapped source (L<sub>OV</sub>). The scope of the work is to explore the performance boost and optimization of the studied devices b...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Open Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9104887/ |