Giant Seebeck effect across the field-induced metal-insulator transition of InAs
Abstract Lightly doped III–V semiconductor InAs is a dilute metal, which can be pushed beyond its extreme quantum limit upon the application of a modest magnetic field. In this regime, a Mott-Anderson metal–insulator transition, triggered by the magnetic field, leads to a depletion of carrier concen...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2020-12-01
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| Series: | npj Quantum Materials |
| Online Access: | https://doi.org/10.1038/s41535-020-00296-0 |