Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible r...

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Bibliographic Details
Main Authors: Jin Mo Kim, Sung Won Hwang
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Molecules
Subjects:
HfOx
GQD
RRAM
memristive devices
resistive switching
Online Access:https://www.mdpi.com/1420-3049/26/22/6758

Internet

https://www.mdpi.com/1420-3049/26/22/6758

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