Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory
We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible r...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/26/22/6758 |
| _version_ | 1797509227502108672 |
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| author | Jin Mo Kim Sung Won Hwang |
| author_facet | Jin Mo Kim Sung Won Hwang |
| author_sort | Jin Mo Kim |
| collection | DOAJ |
| description | We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, V<sub>f</sub> changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al<sup>+</sup> ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect. |
| first_indexed | 2024-03-10T05:14:43Z |
| format | Article |
| id | doaj.art-5a2e12cbae9941f78629836c6eb01799 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T05:14:43Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-5a2e12cbae9941f78629836c6eb017992023-11-23T00:33:19ZengMDPI AGMolecules1420-30492021-11-012622675810.3390/molecules26226758Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access MemoryJin Mo Kim0Sung Won Hwang1Micro LED Research Center, Korea Photonics Technology Institute, Gwangju 61007, KoreaDepartment of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, KoreaWe have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, V<sub>f</sub> changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al<sup>+</sup> ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.https://www.mdpi.com/1420-3049/26/22/6758HfOxGQDRRAMmemristive devicesresistive switching |
| spellingShingle | Jin Mo Kim Sung Won Hwang Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory Molecules HfOx GQD RRAM memristive devices resistive switching |
| title | Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory |
| title_full | Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory |
| title_fullStr | Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory |
| title_full_unstemmed | Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory |
| title_short | Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory |
| title_sort | bipolar resistive switching behavior of pvp gqd hfox ito graphene hybrid flexible resistive random access memory |
| topic | HfOx GQD RRAM memristive devices resistive switching |
| url | https://www.mdpi.com/1420-3049/26/22/6758 |
| work_keys_str_mv | AT jinmokim bipolarresistiveswitchingbehaviorofpvpgqdhfoxitographenehybridflexibleresistiverandomaccessmemory AT sungwonhwang bipolarresistiveswitchingbehaviorofpvpgqdhfoxitographenehybridflexibleresistiverandomaccessmemory |