<it>n</it>-Type Doping of Vapor&#8211;Liquid&#8211;Solid Grown GaAs Nanowires

<it>n</it>-Type Doping of Vapor&#8211;Liquid&#8211;Solid Grown GaAs Nanowires

<p>Abstract</p> <p>In this letter, <it>n</it>-type doping of GaAs nanowires grown by metal&#8211;organic vapor phase epitaxy in the vapor&#8211;liquid&#8211;solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400&#176;C i...

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Bibliographic Details
Main Authors: Gutsche Christoph, Lysov Andrey, Regolin Ingo, Blekker Kai, Prost Werner, Tegude Franz-Josef
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Subjects:
Nanowires
MOVPE
Gallium arsenide
Doping
Silicon
Tin
Optoelectronics
Online Access:http://www.nanoscalereslett.com/content/6/1/65

Internet

http://www.nanoscalereslett.com/content/6/1/65

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