Estimation of the temperature dependent interaction between uncharged point defects in Si
A method is described to estimate the temperature dependent interaction between two uncharged point defects in Si based on DFT calculations. As an illustration, the formation of the uncharged di-vacancy V2 is discussed, based on the temperature dependent attractive field between both vacancies. For...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4906565 |