Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates

We studied the emissive pits in InGaN films grown on compressive and strain-free GaN underlying layers. Pit density decreased with the full width at half maximum of ω(0002) of InGaN. The films grew on compressive and strain-free GaN underlying layers with spiral and step-flow mod...

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Bibliographic Details
Main Authors: Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda
Format: Article
Language:English
Published: AIP Publishing LLC 2017-01-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4974935

Internet

http://dx.doi.org/10.1063/1.4974935

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