Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
Photodetectors based on 2D transition metal dichalcogenides exhibit ever increasingly competitive performance, yet not superior to that of alternative technologies. Here, the authors devise a MoS2-based phototransistor with an out-of-plane junction, yielding a record detectivity combined with broadb...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2017-09-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-017-00722-1 |