Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells

Abstract The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in an InGaN/AlGaN/ GaN heterostructures with one filled quantum-confinement subband. The aim of the article is to create a mathematical model that can be used to estimate the kinetic paramete...

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Detalles Bibliográficos
Main Authors: Evgeny R. Burmistrov, Lev P. Avakyants, Marina M. Afanasova
Formato: Artigo
Idioma:English
Publicado: Springer 2021-07-01
Series:SN Applied Sciences
Subjects:
Quantum well
Mechanical stresses
Heterostructure
Transport time
Two-dimensional electron gas
Scattering
Acceso en liña:https://doi.org/10.1007/s42452-021-04741-y

Internet

https://doi.org/10.1007/s42452-021-04741-y

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